Abstract
A systematic study of the effect of growth interruption on the interface roughness of InAsxPi1−x/InP heterostructures has been carried out. High resolution X-ray diffraction, photoluminescence and optical absorption measurements for InAsP/InP strained multiple quantum wells reveal that the InAsP/InP interface is very sensitive to growth interruption. For nonoptimal growth interruption procedures a large density of interface states is created, probably as a consequence of compositional modifications within the interface region. We find that photoluminescence on its own is insufficient to characterize the interface roughness in our samples, since even for narrow low-temperature peak emissions corresponding to the multiple quantum wells, the absorption spectrum may reveal a significant density of interface states.
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