Abstract
Abstract The present study is a logical continuation of previous investigations of the SiGe heteroepitaxial system (HES). The primary object of this work was to define the conditions for the formation of fragmentary structure (FS) in the SiSi e Ge system, where Si e designates a homoepitaxial silicon film. It is shown that, after the Ge film deposition, decrease of the HES cooling rate to 2 °C min −1 makes it possible to obtain the HES without FS for a Ge film thickness d of approximately 3 μm and to improve the heterodiode I–V characteristics. The distribution of defects through the film thickness has also been studied.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
