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Abstract
A new model has been developed to account for the Cu2S layer growth rate variations observed when polycrystalline films of CdS are immersed in CuCl solution. The model assumes diffusion-limited growth at both the grain boundary and mid-grain regions and excellent agreement with experimental data is obtained provided that the growth process at the grain boundaries is assumed to be delayed for a short interval after the start of the reaction at the main CdS surface. The cause of the delay and the experimental factors influencing the delay time are discussed.
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