Abstract
In this paper the effect of germanium doping on oxygen donors in Czochralski (CZ) silicon has beeninvestigated. It is found that germanium suppresses the formation of thermal donors during annealingat 450 °C, as a result of the reaction of Ge with point defects in CZ silicon. Meanwhile, it is clarifiedthat germanium enhances the formation of new donors in CZ silicon, which is proposed tobe a process associated with the nucleation enhancement of oxygen precipitation bygermanium doping.
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