Abstract
We have proposed the use of 1.3 μm InGaAs/InGaP laser on an InP (100) substrate to reduce the leakage current. Because of the lattice-mismatch between InP and InGaP, epitaxial lateral overgrowth (ELO) technique is used. Ge doping is an effective way of increasing the amount of lateral growth in InP/InP lattice-matched ELO. In the InGaP/InP lattice-mismatched ELO, the crystal defects of the Ge-doped InGaP layer decrease compared to undoped sample. The Ge doping is effective for growing InGaP/InP with high crystalline quality by ELO. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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