Abstract
Two Er-doped-GaAs photoconductive (PC) switches have been studied in extrinsic mode with different Er fractions of 1% and 2%. The PC switches were driven with a 1550 nm ultrafast laser (hν = 0.56 U <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> , U <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> = 1.42 eV for GaAs) and exhibited different THz bandwidths and photoelectric responsivities. These experiments are aimed at optimizing the new extrinsic mode of generating THz radiation in ErAs:GaAs photoconductive devices. This is the first ever demonstration of generating THz power with extrinsic photoconductivity with a 2% Er ErAs:GaAs PC switch. We find that the PC switch with 2% Er concentration produced more THz power and the bandwidth was marginally better.
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