Abstract
Ellipsometry is used to measure the strain induced in the oxide film by the electric field during the anodic oxidation of tungsten. The strain is found to vary as the power of the field and to equal 1% at a field of under galvanostatic oxidation at 200 μA/cm2. Open‐circuit transient analysis is used to determine the dependence of the current density and the dielectric constant on the field in the oxide film. The current is found to be limited by an effective field proportional to the product of the field and the dielectric constant. The dielectric constant is found to vary linearly with field, decreasing by 45% between zero field and the oxidation field. The Clausius‐Mossotti relation is used to relate the variation in the dielectric constant to the strain in the film, and the results of the open‐circuit transient analysis are found to be in very good agreement with the ellipsometric measurements of strain. It is concluded that field‐induced strain in the oxide film has a strong effect on its dielectric constant, and through it on the effective field which controls the anodic oxidation process.
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