Abstract
In this work, the nonequilibrium electron and phonon temperature distributions in semiconductors, initially heated on the surface with a short laser pulse, are calculated as a function of position and time. The transient temperatures of both quasiparticle systems are calculated self-consistently with the electron–phonon energy interaction taken into account. The electron and phonon temperature distributions are calculated using the Fourier integral and the coupled time-dependent one-dimensional heat diffusion equations for electron and phonon systems with special boundary conditions according to the experimental set-up.
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