Abstract
The nano-engineered silicon–germanium heterojunction bipolar transistors (SiGe HBTs) were irradiated with 100 MeV phosphorous ions up to a high total dose of 100 Mrad. The irradiated SiGe HBTs were subjected to mixed mode (MM) electrical stress and isochronal annealing. The DC electrical characteristics were studied for ion irradiated, electrically stressed and thermally annealed SiGe HBTs. The important parameters such as base current (IB), current gain (hFE) and output characteristics of the irradiated SiGe HBTs were significantly degraded after 100 Mrad of the total dose. This is due to high energy ion induced damages in Emitter-Base (E-B) and Shallow Trench Isolation (STI) oxides. A significant recovery in device parameters was observed after both MM stress and isochronal annealing. The recovery in electrical characteristics of the irradiated SiGe HBTs is mainly due to the raise in the junction temperature and de-trapping of trapped charges.
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