Abstract
The author calculates the scattering rates for intrasubband and intersubband transitions in GaAs-AlAs quantum wells due to interface phonons with an applied longitudinal electric field. The electron-interface-phonon (Frohlich) Hamiltonian used is that obtained from the Fuchs-Kliewer slab model, and the electron envelope wavefunction under the influence of an electric field parallel to the growth direction is obtained by a variational method. The usual selection rules for these transitions break down and the scattering rates are found to increase significantly when an electric field is applied. These scattering rates may even become the dominant scattering mechanism for large quantum wells and sufficiently high fields. He observes also that this change in scattering rates has an important dependence on the interface-phonon dispersion.
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