The effect of electric field and impurity on the optical properties of multishell quantum dots

Abstract

The effect of constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in two-wells spherical quantum dot GaAs/AlxGa 1−x As/GaAs is researched. The problem is solved in the framework of the effective mass approximation and rectangular potential wells and barriers model using the method wave function expanding over complete electron wave functions in nanostructure without electric field. It is shown that under the effect of electric field the electron in ground state tunnels from inner potential well to the outer one. It also influences on the oscillator strengths of intraband quantum transition. The binding energy of electron with impurity ion is obtained as function of electric field intensity at the different location of impurity.