Abstract
Abstract In transmission phase shift mask, variety of linewidths can be obtained by changing the duty ratio (space to linewidth ratio) of line and space structures. It has been observed that besides the change in linewidth, it also shifts the resist patterns which is quite substantial for subhalf micron technology device design rules. A simulator named SIMPHAD has been developed to design the phase shift mask. Using this simulator, the change in linewidth and the pattern displacement error have been quantified for both full and partial transmission type phase shift masks under various exposure conditions and are discussed in detail.
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