Abstract
Epitaxial CoSi 2 layers have been fabricated by 100 and 200 keV Co + implantation into (111) and (100) single-crystalline silicon. The dependence of Co concentration on ion dose was investigated systematically by varying the ion dose from 0.5 to 10 × 10 17 cm −2 for 200 keV and from 1 to 1.4 × 10 17 cm −2 for 100 keV implants. Rutherford backscattering (RBS), ion channeling and sheet resistivity measurements were used to characterize the samples. The Co peak concentration in the profile maximum depends linearly on ion dose up to the stoichiometric concentration of CoSi 2 Above this value Co seems to be redistributed to both sides of the implantation profile and in addition Co atoms may be incorporated in the center of the CoSi 2 unit cell.
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