Abstract
During the growth of macroscopically dislocation-free Czochralski silicon crystals three types of swirl defects (types A, B and C) can form. The effect of doping with electrically active impurities (B, Ga, Sb, P and As) and isoelectronic impurities (Sn) on the formation of these microdefects has been investigated by means of preferential etching, copper and lithium decoration, X-ray transmission topography and EBIC-mode SEM. Doping with donors (concentration > 10 17 cm -3) suppresses the formation of A swirl defects (dislocation loops). Doping with acceptors (concentration > 10 17 cm -3) eliminates the formation of B and C swirl defects, while doping with tin has no effect. The new experimental data strongly suggest that the formation of the different types of swirl defects is due to parallel condensation processes involving silicon interstitials and vacancies. The observed doping effects are explained in terms of complex formation as a result of coulomb attraction between dopants and charged thermal point defects.
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