Abstract
The crystallization kinetics of chalcogenide films, to which small concentrations of foreign elements such as Cu, Co, Pb, Ag and Sb are added, were investigated theoretically. It is found that the critical cooling rate can be taken as the criterion for evaluating the roles of various elements on the erasure speed. Since the elements having lower Tg/Tm possess higher critical cooling rates, they are favorable for enhancing the erasure speed of the above films. On the other hand, the Tg of the elements having lower Tg/Tm is found to be the main factor in determining the stability of corresponding films at room temperature because these elements possess higher crystallization speed in the temperature range between Tg and Tm. Therefore, the elements having lower Tg/Tm and higher Tg can be used to improve both the erasure speed and the stability of the reversible phase-change optical recording films.
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