Abstract
By using the Green's function method, we have investigated spin Hall conductance (SHC) in a four terminal quantum spin Hall insulator. The results show that the intrinsic spin orbit coupling in a HgTe/CdTe hetero-structure interface naturally leads to separate probability distributions for the two spins in coordinate space, which leads to the spin Hall effect in our proposed device. We also find that the SHC of bulk states exhibits an oscillatory behavior as a function of the device width and persists at a broad device width. In addition, we calculate the effects of disorder on the SHC of the bulk states of non-trivial and trivial topology. The results indicate that the spin up and spin down conductances show different degrees of suppression by disorder; thus the SHC could be significantly enhanced by the disorder. This kind of property has a great value to practical applications.
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