Abstract
A study of a 4H-SiC ultra short channel MOSFET using state of the art drift-diffusion (DD) and hydrodynamic transport (HD) simulation models is presented. The results have been compared with simulations using a full band Monte Carlo (MC) model. The MC model used is based on data from a full potential band structure calculation using the local density approximation (LDA) to the density functional theory (DFT).
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