Abstract
The influence of different As-precursors [TMAs (trimethylarsine), TBAs (tertiarybutylarsine) and AsH3 (arsine)] on the formation of InAs-quantum-dots and their evolution was studied by applying reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE). Hydrogen radicals at the surface are found to enhance the ripening and coalescence processes. The use of TBAs instead of AsH3 can partly reduce coalescence. Monitoring the GaAs overgrowth on InAs-quantum dots, the level of GaAs-covering was determined by RAS-measurements. Temperature dependent In-segregation effects were observed in situ.
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