Abstract
In this work, Cu-doped SnO 2 thin films were deposited by spray pyrolysis method. The films were prepared using SnCl 4 ,5H 2 O and CuCl 2 ,2H 2 O hydro-alcoholic solution. Then, the sensitivity parameter of SnO 2 -based CO 2 -gas sensors is studied for various atomic percentages ([Cu]/[Sn] = 0, 2, 4, 6, 10,12.5,15, 20, 25). In addition, the effect of substrate temperature on the sensing behavior of films was also studied. The XRD and SEM structural analysis of thin film sensors confirm the nano-structure of the films with SnO 2 cassiterite phase. The optical band gap of Cu doped- SnO 2 films were obtained from optical absorption spectra by UV-Vis absorption spectroscopy. Measurement of the electrical resistivity of films shows that with increasing of Cu-doping in films up to 12.5%, the electrical resistivity increase sharply.
Highlights
In this work, Cu-doped SnO2 thin films were deposited by spray pyrolysis method
CO2 gas-sensing is a very important since it can prevent the ignition of explosive gases; in medical applications, mainly in equipment for ventilation assistance used for pulmonary diseases and in sensing automotive exhaust gases
It is well known that thin film sensor using several different processes can detect CO2 gas
Summary
CO2 gas-sensing is a very important since it can prevent the ignition of explosive gases; in medical applications, mainly in equipment for ventilation assistance used for pulmonary diseases and in sensing automotive exhaust gases. The sensing process related to the electrical resistance changes, due to CO2 adsorption on the surface of semi-conducting sensors (Korotcenkov et al, 2001). Operation of metal oxide sensors is based on reduction of resistance of a metal- oxide thin film in presence of a flammable gas (Cao et al, 2001). A gas sensor device with nano structure materials, the effective surface of particles is increased, and more exposure to the gas (Kissine et al, 2001). It is generally shown that sensing parameters of these devices are dependent on the presence of impurities such as Cu, Fe and Co and will be much enhanced when these materials are prepared as nano structure (Zhuiykov et al, 2001). The doping level of impurity in solution had been changed from 0% to 25% (i.e.[Cu]/[Sn] atomic ratio% = 0, 2, 4, 6,10,12.5,15, 20, 25)
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