Abstract
Conventional diamond powders (<10 μm) are generally produced from crushing large-sized diamonds synthesized by high-pressure and high-temperature (HPHT) technique, whereas they have many morphological imperfections. In the present work, these powders are served as diamond seeds and regrown by hot filament chemical vapor deposition (HFCVD). Deposition parameters—such as the carbon concentration, substrate temperature, and bias current—which play a determined role in the homoepitaxial growth rate of micron diamonds, are investigated in their respective usual ranges. As shown in the experimental results, under the preconditions of maintaining the good morphology of crystals and inhibiting polycrystal growth, the growth rate of isolated diamond crystals can be controlled at 0.9 μm/h. Besides, the final improved powders have a wide range of particle sizes, which could fail to meet the requirements for commercial powders without the post-process of sieving.
Highlights
Microcrystalline diamond powders, those the sizes of which are less than 10 μm, have a wide range of polishing applications in ultra-high precision industries such as semiconductors and optoelectronics
Most microcrystalline powders are produced from crushing large-sized diamonds synthesized by high-pressure and high-temperature (HPHT) technique
In [9], we reported on a possible approach to redeposit the conventional microcrystalline diamond powders by hot filament chemical vapor deposition (CVD) (HFCVD) technique and eventually develop 15 million well-shaped isolated crystals simultaneously on a 1000 mm2 substrate
Summary
Microcrystalline diamond powders, those the sizes of which are less than 10 μm, have a wide range of polishing applications in ultra-high precision industries such as semiconductors and optoelectronics. Most microcrystalline powders are produced from crushing large-sized diamonds synthesized by high-pressure and high-temperature (HPHT) technique. In [9], we reported on a possible approach to redeposit the conventional microcrystalline diamond powders by HFCVD technique and eventually develop 15 million well-shaped isolated crystals simultaneously on a 1000 mm substrate. 1 μm) relatively high homoepitaxial growth rate by controlling the deposition parameters. To crushing the large-sized HPHT diamonds are regrown in the HFCVD reactor. The conventional microcrystalline powders (about 1 μm) produced from including the the carbon concentration, substrate temperature, and bias current, with the purpose of crushing large‐sized. Including the carbon concentration, substrate temperature, and bias current, with the purpose of trying to increase the homoepitaxy growth rate while keeping well in the morphology of crystals and
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
