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Abstract
The influence of oxygen content, radio-frequency (rf) sputtering power, and postdeposition annealing on the electrical properties of gallium-indium-zinc oxide (GIZO) thin-film transistors (TFTs) is analyzed. Little to no oxygen content in the sputtering chamber is crucial to obtain high-performance devices, even before annealing. In contrast, a high oxygen content and rf power lead, respectively, to unstable/poor performing and depletion mode TFTs before annealing, and mainly for these nonideal conditions, annealing proves to be effective to improve device performance/stability and to decrease the performance discrepancy among TFTs processed under different oxygen and rf power conditions. Best TFTs present a field-effect mobility of 46 cm 2 /V s, subthreshold swing of 0.26 V/dec, threshold voltage of 0.70 V, and an on/off ratio 10 8 -10 9 . These results are a consequence of the optimized processing and of the usage of proper GIZO target composition, 1:2:1 mol.
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