Abstract
AbstractThe effect of deposition temperature and the addition of Si to sputter deposited Al-Cu thin-film microstructure was studied with transmission electron microscopy. Films were studied in the as-deposited and annealed condition. The effects of thermal treatment were studied with in-situ hot stage microscopy. Al2Cu (θ) precipitated at the grain boundaries and the sublayer interface. At higher deposition temperatures, with alloy composition in single phase region (Al-1.5 wt.%Cu), Al2Cu precipitated during cooldown. At lower temperatures, in the two phase Al-0 region, Al2Cu precipitated during deposition. The addition of Si caused formation of Si precipitates and retarded Al2Cu precipitation during deposition or cooldown.
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