The effect of deep trench and sub-collector on the latchup robustness in BiCMOS silicon germanium technology

A Watson,S.H Voldman

doi:10.1109/bipol.2004.1365772

The effect of deep trench and sub-collector on the latchup robustness in BiCMOS silicon germanium technology

A Watson, S.H Voldman

https://doi.org/10.1109/bipol.2004.1365772

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Publication Date: Dec 13, 2004

Citations: 12

Affiliation: Pennsylvania State University, University of Vermont

#SiGe HBT Technology #Latchup Robustness + Show 8 more

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Abstract

This paper demonstrates the influence and improvement of deep trench (DT) isolation, and bipolar sub-collector on CMOS latchup in a 0.13 /spl mu/m CMOS-based 200/285 GHz (f/sub T//f/sub max/) SiGe HBT technology.

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