Abstract
High densities of both bulk and interface states were found in CdZnS/CuInSe 2 thin film devices. Deep level transient spectroscopy studies showed that air baking removes minority carrier levels at 39 meV and 78 meV. Light induced capacitance indicated that charging of deep interface states reduced the CuInSe 2 diffusion potential. A model was proposed using interface recombination as the only diode current mechanism. This model relates interface state charging to a reduced open-circuit voltage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
