Abstract
In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particle can deposit enough charge in the sensitive volume of a semiconductor device to cause a potential change in the transient state, that is, a single-event transient (SET). In this study, a quantitative characterization of the effect of a DNW on a SET in a 65 nm triple-well NMOSFET was performed using heavy ion experiments. Compared with a bulk NMOSFET, the experimental data show that the percentages of average increase of a SET pulse width are 22% (at linear energy transfer (LET) = 37.4 MeV·cm2/mg) and 23% (at LET = 22.2 MeV·cm2/mg) in a triple-well NMOSFET. This study indicates that a triple-well NMOSFET is more sensitive to a SET, which means that it may not be appropriate for radiation hardened integrated circuit design compared with a bulk NMOSFET.
Highlights
Along with the wide application of electronic technology in the aerospace field, research on single-event effects of integrated circuits (ICs) has become ever more important
In this study,triple-well the simulation results were and experimental characterization of the effect of deep n+ well (DNW) with on NMOSFETs investigated in heavy ion experiments
NMOSFETs were investigated in heavy ion experiments
Summary
Along with the wide application of electronic technology in the aerospace field, research on single-event effects of integrated circuits (ICs) has become ever more important. In a triple-well NMOSFET, the amplification effect of a parasitic bipolar transistor becomes the main factor due to the deep n+ well (DNW) changing the rate of diffusion of electrons and holes, leading to higher probability of SET In these works [8,9], all of the results just come from device simulations. Because it isof easy to semiconductor devices to bring about single-event transients (SETs); more studies need to be modulate threshold voltage by using well bias, triple-well technologies are extensively used in conducted in heavy ion experiments for quantitative verification. It was found that this storage circuits When these circuits are used in aerospace electronic instruments, they are is very sensitive single-event multiple cell upsets (MCUs) compared with that in bulk CMOS exposed to thetoradiation of particles making the effects of particles on these circuits anthe important technology pulse quenching. The N-hit cell and chain, proposed by Gadlage for NMOSFET SET production and propagation [6], were introduced in our work
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