Abstract
Pb1−xFexS nanoparticle films were grown on silicon substrates under zero, positive and negativebiasing by the chemical bath deposition technique. The grain size for films with a fixedx was observed to increase with positive biasing and decrease with negative biasing of thesubstrates. Distortion of the lattice is observed to increase and the average grain sizedecreases as the substrate bias is changed from positive through zero to negative values.The DC conductivity of the films decreases with decrease in grain size due toenhanced surface scattering. The nanoparticle films are semiconducting and show apredominance of variable range hopping of the carriers among localized states.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
