Abstract
Porous silicon (PS) layers were formed on n-type silicon (Si) wafers using Photo- electrochemical Etching technique (PEC) was used to produce porous silicon for n-type with orientation of (111). The effects of current density were investigated at: (10, 20, 30, 40, and50) mA/cm2 with etching time: 10min. X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon. The maximum crystal size of Porous Silicon is (33.9nm) and minimum is (2.6nm) The Atomic force microscopy (AFM) analysis and Field Emission Scanning Electron Microscope (FESEM) were used to study the morphology of porous silicon layer. AFM results showed that root mean square (RMS) of roughness and the grain size of porous silicon decreased as etching current density increased and FESEM showed that a homogeneous pattern and confirms the formation of uniform porous silicon. The chemical bonding and structure were investigated by using Fourier transformation infrared spectroscopy (FTIR). The band gap of the samples obtained from photoluminescence (PL). These results showed that the band gap of porous silicon increase with increasing porosity.
Highlights
Porous silicon (PS) was discovered in 1956 by Ulhir [1] while performing electropolishing experiments on silicon wafers, using an electrolyte containing hydrofluoric acid (HF) under the appropriate applied current and solution composition, the spatial confinement of the excited carriers in small silicon regions
This paper investigated the effects of current density as variable factors simultaneously an attempt has been made to study the correlation between the, structural properties employing photoluminescence (PL) for porous silicon formed using n-type material under different conditions
XRD analyses show a typical diffraction pattern of PS sample fabricated at etching current density of (10, 20, 30, 40 and 50) mA/cm2 respectively at etching time of 10 min formed during the Photoelectrochemical Etching technique (PEC) process
Summary
Porous silicon (PS) was discovered in 1956 by Ulhir [1] while performing electropolishing experiments on silicon wafers, using an electrolyte containing hydrofluoric acid (HF) under the appropriate applied current and solution composition, the spatial confinement of the excited carriers in small silicon regions. Some properties of the PS layer, such as the refractive index, porosity, physical and optical thickness and pore diameter are strongly dependent on the etched parameters including HF concentration, current density, temperature and Si wafer type and resistivity [11, 12].
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