The effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes

Abstract

The effect of current crowding on the internal quantum efficiency (IQE) of InAsSb/InAs light-emitting diodes (LEDs) operating in the middle-infrared (mid-IR) range (λ = 3−5 μm) has been studied. Calculations based on a modified model of recombination coefficients show that current crowding leads to a significant decrease in the IQE of LEDs, which is especially pronounced in longer-wavelength devices (23% at λ = 3.4 μm versus 39% at λ = 4.2 μm). The obtained results indicate that the effect of current crowding should be taken into consideration as an additional nonthermal mechanism of IQE decrease in mid-IR LEDs.