The Effect of Crystalline Aluminum Oxide on Device Performance of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Operating at Low Voltage.

Abstract

High dielectric constant (high-k) materials have been extensively investigated for low-voltage operating electronics. In recent years, solution-processed high-k dielectrics have been of technological interests in low fabrication cost, large area process and good film quality, compared to the vacuum-process technology. In this paper, we demonstrate solution-processed aluminum oxide (Al2O3) dielectrics for high performance solution-processed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) operating at low voltage. The material and electrical properties of Al2O3 dielectrics fabricated at different post-annealing temperatures were analyzed by atomic force microscopy, scanning electron microscopy, X-ray diffraction and capacitance-voltage measurements. We also investigate the effect of crystalline Al2O3 dielectrics on the device performance of solution-processed IGZO TFTs. It is concluded that improved interfacial characteristics of crystalline Al2O3 dielectrics enhance the device performance of solution-processed IGZO TFTs operating at 3 V.