Abstract
The substitution of the aliovalent dopant Cr2O3 on the Ti site was investigated in terms of the effects on the dielectric properties at doping levels ranging from 0.1 to 1.0%. No evidence of secondary phases was observed from XRD analysis, but both the permittivity and dielectric loss of 1% Cr2O3 doped CaCu3Ti4O12 were improved with K≈19,000 and tan δ≈0.049 at 1 kHz. Also, 1% Cr2O3 doping was effective at maintaining the high K up to 150 V. From these results, it can be incurred that Cr2O3 doping is an efficient method to achieve a high-K and low loss.
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