Abstract

In this work, a very thin (20nm) copper (Cu) coated silicon (Si) nanocolums are produced by an oblique angle deposition method. Galvanostatic half-cell measurements show that, the Cu coated Si nanocolumn arrays perform 1700mAhg−1 in the first cycle, then after 10cycles its performance is stabilized to 500mAhg−1 with 99% coulombic efficiency for 90cycles. This high performance is related to its particular morphology and physical properties: having homogenously distributed nano-sized porosities in the Cu coated film increase the mechanical tolerance of the electrode against the volumetric changes occurred during galvanostatic test, plus the ductile behavior of the Cu film holds the electrode together to prevent the electronic isolation, pulverization or delamination of the coating, moreover the formation of Cu15Si4 intermetallic increases the mechanical resistances of the coating against the stress generated in the electrode, and the existence of the Cu top coat between the Si nanocolumns and the electrolyte changes the surface reactivity of the electrode, hence its interaction with the electrolyte leading to higher coulombic efficiency once a stable passive forms on the anode.

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