Abstract
In monocrystalline silicon, which is easily condensed with copper and iridium, the recombination time is more stable compared to conventional samples. If the concentration of recombination centers in silicon is less than the concentration of adhesion levels, the residence time of non-basic charge carriers increases, and its values are determined by the concentration of adhesion levels. Compared to conventional silicon samples that were legalized with copper and iridium, a large concentration of copper and iridium was observed in neutron-legalized samples. Сoncentration maxima are observed in the DLTS spectra after thermal diffusion of samples of n-Si<P,R,Cu>, n-Si<P,P,Ir> at 1150 oC. This was followed by the study of the structure, size and distribution of silicon mixing defects, which was legitimized by copper and iridium, using ATM.
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