Abstract
Barrier height is an important parameter for metal/silicon rectifying contacts. In this paper the barrier heights of TixW{1-x}/Si contacts have been studied and found to range from 0.54 eV for high Ti content to 0.66 eV for pureW. Interpretation is made in terms of the parallel Schottky diode model of Tu. Ohmic contact measurements of TixW1-x/ Si metallization after heat treatment at 500° C have also been made and specific contact resistances of less than 10−6 ohm-cm2 obtained in shallow implanted junction devices.
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