The effect of Co on room temperature positive magnetoresistance in the CoxC1−x/Si system

Abstract

Co x  C 1 − x granular films and pure carbon films were deposited on n-type Si substrates using the pulsed laser deposition method. Three types of samples were obtained: pure C/Si, CoxC1−x granular film/Si with Co dispersed in the C film, and CoxC1−x/Si with Co segregated at the interface. After comparing the physical properties and structures of these three types of samples, we found that the segregation of Co at the interface not only increased the maximum value of magnetoresistance but also improved the magnetoresistance sensitivity in the CoxC1−x/Si system.