Abstract
The effect of bulk (τ) and radiative (τr) charge-carrier lifetimes on the degree of spatial separation of the regions of the carriers’ generation and radiative recombination in graded-gap semiconductors with the drift transport mechanism in the built-in quasi-electric field of the crystal was investigated experimentally and theoretically. It was found that the degree of spatial separation increases with increasing τ and/or τr. The effect of spatial separation of the regions of radiative recombination, which correspond to transport mechanisms with various τr, was observed. The data obtained are related to the coordinate dependence of recombination probability for graded-gap semiconductors.
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