Abstract
Structure and electrical properties of Ba(ZrxTi1−x)O3 (BZT) and Ce-doped Ba(ZrxTi1−x)O3 (BCZT) thin films with the mole fraction of x=0.2 had been investigated. BZT and BCZT films were prepared on Pt/SiO2/Si substrate by a rf magnetron sputtering system. We have investigated the effect of Ce doping in BZT thin film. The argon to oxygen gas ratio was 4:1 and the deposition temperatures were 400, 500, and 600°C. BCZT thin films had the high growth rate and the smoother surface than BZT thin films. The dielectric constant (εr) was lower in BCZT thin films compared to BZT films (εr(BZT)=145, εr(BCZT)=121 at 500°C). And, the dissipation factor (tanδ) and the leakage current was lower in Ce-doped BZT thin films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
