Abstract
A quantitative derivation is presented for the heat transport in bipolar semiconductors, taking into account generation and heating of carriers on the surface due to an incident modulated laser beam on the surface and finite carrier diffusion and recombination in the solid. The temperature distribution as function of the position and time in the semiconductor is calculated using appropriate boundary conditions according to the photoacoustic experimental conditions. In addition, special emphasis is made on the heat power density generated in the sample due to the recombination of the electron–hole pair and the effect of the inhomogeneous temperature distribution on the thermal generation rate of carriers in the photoacoustic signal.
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