Abstract
The brittle-to-ductile transition (BDT) in boron or antimony doped Czochralski (CZ) silicon single crystals was investigated by three-point bending. The temperature dependence of the apparent fracture toughness was measured in three different crosshead speeds, indicating that the BDT temperature in boron doped silicon is the same as that in non-doped one while the BDT temperature in antimony doped silicon is lower than that in non-doped one. The activation energy was obtained from the deformation rate dependence of the BDT temperature, suggesting that the dislocation velocity in boron doped silicon is the same as that in non-doped while the dislocation velocity in antimony doped is larger than that in non-doped one. [doi:10.2320/matertrans.M2010048]
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