Abstract
Bismuth titanate thin films are deposited on ITO/glass substrates by rf magnetron sputtering at room temperature using a Bi 4Ti 3O 12 ceramic target. The deposited Bi 4Ti 3O 12 films are annealed in a conventional furnace in ambient air for 10 min at temperatures ranging from 550 to 640 °C. One specimen is annealed in a crucible containing additional Bi 2O 3 compensation powder, while the other specimen is annealed in ambient air. XRD analysis shows that the crystal phases of films annealed with Bi 2O 3 powder are better than those of films annealed without Bi 2O 3 powder. Furthermore, the EDS results reveal that the bismuth weight percentage of the former is higher than that of the latter. SIMS analysis shows that the bismuth decreases near the surface of Bi 4Ti 3O 12 film annealed without Bi 2O 3 powder, but reveals a stable distribution throughout the film annealed with Bi 2O 3 powder. These results imply that bismuth is readily evaporated during the thermal treatment process, particularly from the region near the film surface. Finally, the dielectric and polarization properties of the thin films annealed with Bi 2O 3 powder are found to be superior to those of the films annealed in ambient air.
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