Abstract
The excitation of terahertz (THz) plasmons by a pre-bunched relativistic electron beam propagating in a parallel plane semiconducting guiding system is studied. It is found that the n-InSb semiconductor strongly supports the confined surface plasmons in the terahertz frequency range. The growth rate and efficiency of the THz surface plasmons increase linearly with modulation index and show the largest value as modulation index approaches unity. Moreover, the growth rate of the instability scales as one-third power of the beam density and inverse one-third power of the THz radiation frequency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
