Abstract
The excitation of terahertz (THz) plasmons by a pre-bunched relativistic electron beam propagating in a parallel plane semiconducting guiding system is studied. It is found that the n-InSb semiconductor strongly supports the confined surface plasmons in the terahertz frequency range. The growth rate and efficiency of the THz surface plasmons increase linearly with modulation index and show the largest value as modulation index approaches unity. Moreover, the growth rate of the instability scales as one-third power of the beam density and inverse one-third power of the THz radiation frequency.
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