Abstract
Semiconductor two-sectional laser diodes with active region, consisting of two InGaAs quantum wells of different width separated with GaAs barrier are investigated. At barrier thickness of 2 nm quantum wells are coupled and diagonal optical transition originates between them. Peak in absorption spectra of lasing structure related to this diagonal transition is observed. An additional region of passive mode-locking due to this absorption peak takes place at low reverse biases on absorber section.
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