Abstract
SU-8 photoresist was applied to the gate insulator of a-IGZO TFT. The hard bake temperature of SU-8 is important and was varied from 95 to 185 °C. The FTIR showed that hard-bake temperature higher than 125 °C is necessary for complete polymerization. The leakage current and breakdown voltage were improved as increasing hard bake temperatures to 155 °C. However, the crack was generated at 185 °C degrading the electrical characteristics of insulator. The SU-8 insulator was successfully applied to a-IGZO TFT where the on-off ratio was highest for hard-bake temperature of 155 °C.
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