Abstract
The influence of gas on phosphorus-doped ZnO thin films deposited by radio frequency magnetron sputtering was studied. As the partial pressure of increased in the sputtering gas, the structure of changed from nanorods to a smooth thin film. The electron concentration of the thin film was also decreased due to the reduction in oxygen vacancies that act as donors. Photoluminescence spectra of thin films also showed a reduction in the intensity of the deep level emission peaks, due to the reduction in native defects related to the oxygen vacancies as the partial pressure was increased. The thin films grown under an gas ratio of showed -type characteristics after a rapid thermal annealing (RTA) activation process. The -type showed a resistivity of , a mobility of , with a hole concentration of .
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