Abstract
The structure and properties of anodic Al 2O 3 films formed at different anodizing temperatures from thin Al films deposited by magnetron sputtering on oxidized Si wafers have been studied by transmission electron microscopy, secondary ion mass spectrometry, and electrical measurements. The anodic oxide films formed at 8 °C and 25 °C are amorphous with excellent dielectic properties, leakage current lower than 500 nA at 7.5 MV cm −1 and no breakdown up to 7.5 MV cm −1. Partially crystalline γ'-Al 2O 3 is grown at the upper half of the 58 °C oxide film. This film exhibits much inferior dielectric properties than the lower temperature films. Carbon is incorporated into the top portion of the oxide films from the electrolyte during anodizing and it has little effect on the crystalline oxide formation. Oxygen penetrates into the underlying Al layer during anodizing. The penetration increases with increasing anodizing temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
