Abstract
The anodically treated and untreated (control sample) Au/-Cu/n-GaAs Schottky diodes have been prepared. The anodic oxidization process has been made on the n-GaAs substrate in aqueous $$ 4C_2 H_6 O_2 + 2H_3 PO_4 $$ electrolyte with pH=2.02. The anodic treatment has increased the barrier heights. We have obtained the laterally homogeneous barrier heights of approximately 0.79 and 0.91 eV for the anodically untreated and treated Au/n-GaAs SBDs, respectively, and 0.67 and 0.91 eV for the Cu/n-GaAs SBD eV respectively when accounting for the image-forge effect only. Thus, the barrier height has been increased by at least 110 and 240 meV for Au/n-GaAs and Cu/n-GaAs SBDs, respectively.
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