The effect of annealing temperature thin films indium doped SnO2 to optics properties and material composition

Abstract

This study aims to analyze the effect of annealing of tin oxide thin film doped with Indium. SnO2 thin film has many benefits as electronic devices, solar cells, LPG sensors, etc. Preparation of SnO2: In a thin film using a sol-gel spin coating technique that produces a thin film of high quality. The transmittance of the thin film experienced decreases with increasing ripening temperature with the transmittance of 96.6, 94.7, 89.6, 87.1, and 78.2% at a wavelength of 350 nm with annealing temperature increase, respectively. Thin-film absorbance has increased with higher heating temperatures i.e 3.01, 3.34, 3.41, 3.62, and 3.77, respectively. SnO2 thin film gap energy: In decreases due to increased ripening temperature at room temperature (35), 50, 100, 150, and 200 °C ie 3.65, 3.61, 3.59, 3.58, and 3.56 eV for direct energy gap and 3.96, 3.94, 3.93, 3.91, and 3.89 eV for indirect energy gap, respectively. The decreasing value of the gap energy makes the SnO2: In thin-film material faster in carrying current. The activation energy are decreased by increasing annealing temperature with value 2.91, 2.73, 2.15, 2.11 and 2.09 eV, respectively for increase temperature which makes electrons flow faster. Furthermore, thin-films composition with mass percentage Sn are 16.97% with atomic 2.77% and In are 1.46% with atomic 0.25%.