The Effect of Annealing Temperature on the Maintenance of the Intermediate Electrical Conductivity State of a Ternary‐Polyamide‐Based Memory Device

Abstract

AbstractOrganic electronic memory devices have become one of the most important candidates for the “next generation” of information‐storage devices. Herein, a polymer (PA‐m‐Ph), which contained electron‐donor/‐accepter groups in the main chain and a carbazole group in the side chain, was prepared and investigated as a new electrical memory material. Three polymer films (PA‐m‐Ph‐90, PA‐m‐Ph‐200, and PA‐m‐Ph‐290) were obtained by using different annealing temperatures (90, 200, and 290 °C, respectively). The resulting ITO/PA‐m‐Ph‐90/Al memory device exhibited ternary memory performance, thus indicating that there were three stable conductivity states in the conduction process. The ITO/PA‐m‐Ph‐200/Al device could endure the higher annealing temperature (200 °C) and maintained a similar ternary performance. However, ternary behavior was not observed in the I–V curve of the ITO/PA‐m‐Ph‐290/Al device. We verified that the heating process could lessen the configurational distortion of the carbazole group and affected the stability of the intermediate conductivity state of these ternary memory devices.