The Effect of Annealing Process on Some Physical Properties of GaN Thin Films with Gr Doping

Abstract

This study aims to ensure p-type gallium nitride (GaN) thin-film production through graphene (Gr) and to observe the effects of the annealing process on physical properties. A Gr doped GaN thin film on a glass substrate was coated using the thermionic vacuum arc method and an annealing process was applied to this sample at separate temperatures of 300 °C and 400 °C. To investigate the produced samples, elemental composition, electronic states, nanostructural, morphological, and electrical characteristics were determined by X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and Hall effect technique. The thickness of the samples was determined as 60 nm by a Filmetrics F20 thin film analyzer. According to grazing incident-angle XRD patterns of samples, GaN peaks were observed to become dominant after the 400 °C annealing process. The results show that the used production method is suitable for p-type GaN thin film.