Abstract
It has previously been shown that large rectangular prismatic dislocation loops are sometimes present in LEC-grown InP. The present study shows how these defects are affected by annealing. Material containing these loops (both nominally undoped and Fe-doped) has therefore been annealed at 760°C for 15 min both with and without a silicon dioxide capping layer. The defects were then examined by chemical etching and transmission electron microscopy which revealed that substantial rearrangement had occurred even for defects lying 125 μm beneath the surface. A further consequence of annealing was the creation of a high density of microdefects which were present in all annealed samples but were confined to the surface.
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