Abstract
The broadening of a thin (~3 nm) Au marker, sandwiched between two sputtered silicon films deposited on a single crystal silicon substrate, bombarded with 100 keV argon ions has been observed for different angles of incidence using Rutherford backscattering. The results are compared to a theory used to predict the behaviour of the sputtering yield with angle of incidence. It is found that the effect of incomplete collision cascades and anisotropy of the cascade distribution determine the behaviour of the broadening.
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